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K4213. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistan...
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4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 9.5 mΩ MAX. (VGS = 4.5 V, ID = 20 A) • Low total gate charge QG = 34 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A) • 4.5 V drive available • Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK4213-ZK-E1-AY 2SK4213-ZK-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-
K4213 Datasheet
