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K4069. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4069 SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK4069 is N-channel MOS FET device that features a low on-state resistanc...
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069 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 15 A) • Low QGD: QGD = 3.2 nC TYP. • 4.5 V drive available ORDERING INFORMATION <R> PART NUMBER 2SK4069(1)-S27-AY Note 2SK4069-ZK-E1-AY Note 2SK4069-ZK-E2-AY Note PACKAGE TO-251 (MP-3-b) TO-252 (MP-3ZK) TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in external electrode.
K4069 Datasheet
