Datasheet4U.com

K3511 - MOS FIELD EFFECT TRANSISTOR

Product Overview

Renesas

📥 Download Datasheet

K3511 MOS FIELD EFFECT TRANSISTOR by Renesas - Datasheet Preview — Datasheet preview – K3511

Datasheet Details

Part number	K3511
Manufacturer	Renesas
File Size	142.49 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	K3511 Datasheet
Additional preview pages of the K3511 datasheet.

Product details

Description

The 2SK3511 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance: RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A).
Low Ciss: Ciss = 5900 pF TYP.
Built-in gate protection diode 2SK3511-ZJ 2SK3511-Z Note TO-220SMD package is produced only in Japan. (TO-220AB).

📁 Similar Datasheet

K3511 - MOS Field Effect Transistor (Kexin)
K3515-01MR - 2SK3515-01MR (Fuji Electric)
K3518 - 2SK3518 (Fuji Semiconductors)
K3519PQ-XH - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor (KEC)
K350 - Silicon N-Channel MOSFET (Hitachi)
K3500G - Clock Oscillator (MTRONPTI)
K3502-01MR - 2SK3502-01MR (Fuji Electric)
K3503FC450 - Medium Voltage Thyristor (IXYS)

Other Datasheets by Renesas

K3510 - N-Channel Power MOSFET

Published: Jul 28, 2014 |