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K3233 - 2SK3233

Key Features

  • Low on-resistance: www. DataSheet4U. com.
  • R DS(on) = 1.1 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche ratings Outline TO.
  • 220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK3233 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltag.

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Full PDF Text Transcription for K3233 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3233. For precise diagrams, and layout, please refer to the original PDF.

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor opera...

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ic and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.

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