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K2726. For precise diagrams, and layout, please refer to the original PDF.
2SK2726 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ...
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ed switching • Low drive current • No secondary breakdown • Avalanche ratings Outline REJ03G1024-0400 (Previous: ADE-208-453B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2726 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
K2726 Datasheet
