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K2529. For precise diagrams, and layout, please refer to the original PDF.
2SK2529 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device...
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e • RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1014-0800 (Previous: ADE-208-356F) Rev.8.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.8.00 Sep 07, 2005 page 1 of 7 2SK2529 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.
K2529 Datasheet
