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HAT2036R
Silicon N Channel Power MOS FET Power Switching
Features
• Low on-resistance RDS (on) = 12 mΩ typ
• Capable of 4.5 V gate drive • Low drive current • High density mounting • High speed switching
tf = 60 ns typ.
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
87 65
4
G
1234
5678 DDDD
SSS 123
REJ03G1166-0600 (Previous: ADE-208-665D)
Rev.6.00 Sep 07, 2005
1, 2, 3 4 5, 6, 7, 8
Source Gate Drain
Rev.6.00 Sep 07, 2005 page 1 of 4
HAT2036R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
30
VGSS
±20
Drain current Drain peak current
ID
12
ID (pulse) Note 1
96
Body-drain diode reverse drain current
IDR
12
Channel dissipation
Pch Note 2
2.
HAT2036R Datasheet
