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HAT2029R
Silicon N Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 2.5 V gate drive • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD
56 DD
87 65 1234
2
4
G
G
S1 MOS1
S3 MOS2
REJ03G1164-0600 (Previous: ADE-208-525D)
Rev.6.00 Sep 07, 2005
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
Rev.6.00 Sep 07, 2005 page 1 of 7
HAT2029R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage Gate to source voltage
VDSS
28
VGSS
±12
Drain current Drain peak current
ID
7.5
ID (pulse) Note 1
60
Body-drain diode reverse drain current
IDR
7.