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2SK2957S - N-Channel MOSFET

Download the 2SK2957S datasheet PDF. This datasheet also covers the 2SK2957 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS(on) = 7 mΩ typ.
  • 4 V gate drive devices.
  • High speed switching Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK2957-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2957S Silicon N-Channel MOSFET Hitachi Semiconductor
2SK2957 Silicon N-Channel MOSFET Hitachi Semiconductor
2SK2957L Silicon N-Channel MOSFET Hitachi Semiconductor

Other Datasheets by Renesas

Part Number Description
2SK2957 N-Channel MOSFET
2SK2957L N-Channel MOSFET
2SK2955 Silicon N Channel MOS FET
2SK2956 Silicon N-Channel MOSFET
2SK2925 Silicon N-Channel MOSFET
2SK2925L Silicon N-Channel MOSFET
2SK2925S Silicon N-Channel MOSFET
2SK2928 N-Channel MOSFET
2SK2931 Silicon N-Channel MOSFET
2SK2936 Silicon N Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2957(L), 2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.