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RQM2201DNS
Silicon N Channel MOS FET Power Switching
REJ03G1492-0200 Rev.2.00 Apr 16, 2007
Features
• • • • • Small, thin and leadless type package (3 × 3 mm, t = 0.8 mm max.) Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ) VDSS ≥ 60 V and capable of 2.5 V gate drive
Outline
RENESAS Package code: PWSN0006ZA-A
(Package name: WSON0303-6 )
FET No.1 (Nch) 6 D FET No.2 (Nch) 5 D 4 G
5
6
2 G
1
4
4
3 2
1
(Bottom view)
S 1 S 3
1, 3: Source 2, 4: Gate 5, 6: Drain
Notes:
1. Marking is “M2201“. 2. The following maximum ratings and electric characteristics are applied to both FET1 and FET2.
RQM2201DNS Datasheet
