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RQG1001UPAQF - NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier

Features

  • Ideal for LNA.

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Datasheet Details

Part number RQG1001UPAQF
Manufacturer Renesas
File Size 339.64 KB
Description NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
Datasheet download datasheet RQG1001UPAQF Datasheet

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www.DataSheet4U.com RQG1001UPAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1551-0100 Rev.1.00 Jul 20, 2007 Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN, Cordless phone and etc. • High gain and low noise. MSG = 25 dB typ., NF = 0.65 dB typ. at VCE = 2 V, IC = 5 mA, f = 0.9 GHz MSG = 22 dB typ., NF = 0.75 dB typ. at VCE = 2 V, IC = 5 mA, f = 1.8 GHz MSG = 21 dB typ., NF = 0.85 dB typ. at VCE = 2 V, IC = 5 mA, f = 2.4 GHz MSG = 15 dB typ., NF = 1.3 dB typ. at VCE = 2 V, IC = 10 mA, f = 5.8 GHz • High transition frequency fT = 35 GHz typ. • CMPAK-4 (2.0 x 1.25 x 1.1(max) mm) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “UP-”.
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