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RJM0306JSP - Silicon N / P Channel Power MOS FET

Key Features

  • Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating REJ03G1571-0101 Rev.1.01 May 28, 2010 Outline.

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Datasheet Details

Part number RJM0306JSP
Manufacturer Renesas
File Size 189.12 KB
Description Silicon N / P Channel Power MOS FET
Datasheet download datasheet RJM0306JSP Datasheet

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www.DataSheet.co.kr Preliminary Datasheet RJM0306JSP Silicon N / P Channel Power MOS FET High Speed Power Switching Features      Two elements each of N and P channels are incorporated (suitable for H-bridge circuit) High density mounting Low on-resistance Capable of 4 V gate drive High temperature D-S leakage guarantee Avalanche rating REJ03G1571-0101 Rev.1.01 May 28, 2010 Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) S7 Pin No.