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RJK6024DP3-A0 - High Speed Power Switching MOS FET

Description

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Features

  • Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching Outline.

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Datasheet Details

Part number RJK6024DP3-A0
Manufacturer Renesas Technology
File Size 143.04 KB
Description High Speed Power Switching MOS FET
Datasheet download datasheet RJK6024DP3-A0 Datasheet
Additional preview pages of the RJK6024DP3-A0 datasheet.

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Full PDF Text Transcription

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RJK6024DP3-A0 600 V - 0.4 A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 28 Ω typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSP0004ZB-A (Package name: SOT-223) 4 3 2 1 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch Note2 θch-c Tch Tstg Preliminary Datasheet R07DS1106EJ0100 Rev.1.00 Aug 23, 2013 D 1. Gate 2.
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