• Part: RJK0854DPB
  • Description: Silicon N Channel Power MOS FET
  • Manufacturer: Renesas
  • Size: 129.66 KB
Download RJK0854DPB Datasheet PDF
Renesas
RJK0854DPB
Features - High speed switching - Low drive current - Low on-resistance RDS(on) = 10 m typ. (at VGS = 10 V) - Pb-free - Halogen-free - High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1055EJ0200 (Previous: REJ03G1883-0100) Rev.2.00 Apr 11, 2013 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 Channel to Case Thermal Resistance ch-C Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2. Value at L=10u H, Tch = 25C, Rg  50  3. Tc = 25C Ratings 80 20 25 100 25 25 8.3 55 2.27 150 - 55 to +150 (Ta = 25°C) Unit V V A A A A m J W C/W C...