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RJK03M4DPA - N Channel Power MOS FET

Description

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Features

  • High speed switching.
  • Capable of 4.5 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance.
  • Pb-free.
  • Halogen-free Outline.

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Datasheet Details

Part number RJK03M4DPA
Manufacturer Renesas
File Size 153.16 KB
Description N Channel Power MOS FET
Datasheet download datasheet RJK03M4DPA Datasheet

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Full PDF Text Transcription

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RJK03M4DPA 30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching Features  High speed switching  Capable of 4.5 V gate drive  Low drive current  High density mounting  Low on-resistance  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5678 4321 4 G Preliminary Datasheet R07DS0768EJ0200 Rev.2.00 Feb 12, 2013 5 678 D DDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3.
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