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RJK0365DPA
Silicon N Channel Power MOS FET Power Switching
REJ03G1655-0300 Rev.3.00 Aug 05, 2008
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.0 mΩ typ. (at VGS = 10 V) • Pb-free • • • • •
Outline
RENESAS Package code: PWSN0008DA-A (Package name: WPAK)
5 6 7 8 D D D D
5 6 7 8
4 G
4 3 2 1
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
RJK0365DPA Datasheet
