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RJH60F4DPK - Silicon N Channel IGBT

Features

  • High speed switching.
  • Low on-state voltage.
  • Fast recovery diode www. DataSheet4U. com Preliminary REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Outline.

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RJH60F4DPK Silicon N Channel IGBT High Speed Power Switching Features • High speed switching • Low on-state voltage • Fast recovery diode www.DataSheet4U.com Preliminary REJ03G1835-0100 Rev.1.00 Oct 13, 2009 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) E 1 2 3 Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2.
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