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R8A66120FFA - 4M-bit x 2 MULTIPLE FIELD MEMORY

Description

R8A66120FFA is high-speed field memory with two FIFO (First In First Out) memories of 4M-bit, which uses high-performance silicon gate process technology.

Features

  • Total memory Capacity 8Mega-bit.
  • High speed operation cycle time 10.0ns(Min. ) fmax = 100MHz output access time 6.0ns(Max. ).
  • Output hold time 1.0ns(Min. ).
  • Supply voltage 3.3 ± 0.3V.
  • Variable length delay bit.
  • Synchronous write/read operation.
  • 3 states output.
  • Package PLQP0048KB-A (48P6Q-A) ( 48pins 7x7mm body LQFP ) W-CDMA base station, Digital PPC, Digital TV,VTR and so on. www. DataSheet4U. com.

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Datasheet Details

Part number R8A66120FFA
Manufacturer Renesas
File Size 338.70 KB
Description 4M-bit x 2 MULTIPLE FIELD MEMORY
Datasheet download datasheet R8A66120FFA Datasheet

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Full PDF Text Transcription (Reference)

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R8A66120FFA 4M-bit x 2 MULTIPLE FIELD MEMORY Description RJJ03FXXXREJ03F0161-0170 Rev.1.70 May.16.2008 R8A66120FFA is high-speed field memory with two FIFO (First In First Out) memories of 4M-bit, which uses high-performance silicon gate process technology. Features •Total memory Capacity 8Mega-bit •High speed operation cycle time 10.0ns(Min.) fmax = 100MHz output access time 6.0ns(Max.) •Output hold time 1.0ns(Min.) •Supply voltage 3.3 ± 0.3V •Variable length delay bit •Synchronous write/read operation •3 states output •Package PLQP0048KB-A (48P6Q-A) ( 48pins 7x7mm body LQFP ) W-CDMA base station, Digital PPC, Digital TV,VTR and so on. www.DataSheet4U.
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