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K2725 - 2SK2725

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Avalanche ratings Outline REJ03G1023-0400 (Previous: ADE-208-452B) Rev.4.00 Sep 07, 2005.

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Full PDF Text Transcription for K2725 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2725. For precise diagrams, and layout, please refer to the original PDF.

2SK2725 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ...

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ed switching • Low drive current • No secondary breakdown • Avalanche ratings Outline REJ03G1023-0400 (Previous: ADE-208-452B) Rev.4.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2725 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.