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HAT2220R
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low drive current • High density mounting
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 )
78 DD
56 DD
87 65 1234
2
4
G
G
S1 MOS1
S3 MOS2
REJ03G1572-0500 Rev.5.00
Jul 20, 2007
1, 3 2, 4 5, 6, 7, 8
Source Gate Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage Gate to source voltage Drain current Drain peak current
VDSS
VGSS ID Note1 ID(pulse)Note2
450 ±30 0.7 2.1
Body-drain diode reverse drain current
IDR
0.7
Avalanche current
IAP Note3
0.7
Channel dissipation
Pch Note4
2
Channel dissipation
Pch Note5
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 1 s
2.