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HAT1097R, HAT1097RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0529-0100 Rev.1.00 Feb.15.2005
Features
• Low on-resistance • Capable of 4.5 V gate drive www.DataSheet4U.com • High density mounting • “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-A (Previous code: SOP-8 ) 5 6
7 8 D D D D
8
5 7 6
4 G 3 1 2 4
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings HAT1097R HAT1097RJ Unit V V A A A mJ W °C °C
Drain to source voltage VDSS –60 –60 Gate to source voltage VGSS ±20 ±20 Drain current ID –5 –5 Note1 Drain peak current ID (pulse) –40 –40 Avalanche current IAPNote3 — –5 Avalanche energy EARNote3 — 2.
HAT1097RJ Datasheet
