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H7N0607DS - Silicon N-Channel MOSFET

Download the H7N0607DS datasheet PDF. This datasheet also covers the H7N0607DL variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on-resistance RDS(on) = 26 mΩ typ. www. DataSheet4U. com.
  • Low drive current.
  • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1. Gate 2. Drain 3. Source 4. Drain H7N0607DS H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche ener.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7N0607DL_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H7N0607DS
Manufacturer Renesas
File Size 118.02 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet H7N0607DS Datasheet

📁 Similar Datasheet

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H7N0307L Silicon N-Channel MOSFET Hitachi
H7N0307LD Silicon N-Channel MOSFET Renesas

Other Datasheets by Renesas

Part Number Description
H7N0607DL Silicon N-Channel MOSFET
H7N0602AB Silicon N-Channel MOSFET
H7N0602LD Silicon N-Channel MOSFET
H7N0602LM Silicon N-Channel MOSFET
H7N0602LS Silicon N-Channel MOSFET

Full PDF Text Transcription

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H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.3.00 Jan.27.2005 Features • Low on-resistance RDS(on) = 26 mΩ typ. www.DataSheet4U.com • Low drive current. • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1. Gate 2. Drain 3. Source 4. Drain H7N0607DS H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3.
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