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BIC801M - VHF/UHF RF Amplifier

Features

  • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space.
  • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz).
  • Low noise; NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz).
  • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
  • Provide mini mold packages; MPAK-4R(SOT-143mod) Outline Notes: 1. M.

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Datasheet Details

Part number BIC801M
Manufacturer Renesas
File Size 108.63 KB
Description VHF/UHF RF Amplifier
Datasheet download datasheet BIC801M Datasheet

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BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier www.DataSheet4U.com ADE-208-705C (Z) 4th. Edition Nov. 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz) • Low noise; NF = 1.1 dB typ. (at f = 200 MHz), NF = 1.75 dB typ. (at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; MPAK-4R(SOT-143mod) Outline Notes: 1. Marking is “AY–”. 2. BIC801M is individual type number of HITACHI BICMIC.
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