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RMP3N90IP RMP3N90LD
N-Channel ENHANCEMENT MODE MOSFET
General Description
RMP3N90 is an N-channel enhancement mode MOSFET,which uses the self-aligned planar process and improved terminal technology,reducing the conduction loss,enhancing the avalanche energy.
Features
Low Crss Low gate charge Fast switching Improved ESD capability Improved dv/dt capability 100% Avalanche Tested ROHS compliant Halogen-free
Application
High efficiency swith mode power supplies Electronic lamp ballasts Uninterruptible Power Supply UPS
VDS@Tjmax
900
V
RDS(ON) TYP
2.8
Ω
ID
3.0
A
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
RMP3N90IP
TO-251
3N900
RMP3N90LD
TO-252
3N900
Table 1.
RMP3N90IP Datasheet
