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80N30 - N-Channel Enhancement Mode Power MOSFET

Description

The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • ƽ VDS =30V,ID =80A RDS(ON).

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Datasheet Details

Part number 80N30
Manufacturer Rectron
File Size 313.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet 80N30 Datasheet

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RM80N30LD N-Channel Enhancement Mode Power MOSFET Description The RM80N30LD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ƽ VDS =30V,ID =80A RDS(ON) <6.
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