4N650 - N-Channel Super Junction Power MOSFET

Product Overview

Rectron

Datasheet Details

Part number	4N650
Manufacturer	Rectron
File Size	961.44 KB
Description	N-Channel Super Junction Power MOSFET
Datasheet	4N650 Datasheet
Additional preview pages of the 4N650 datasheet.

Product details

Description

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge.This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Features

ƽNew technology for high voltage device ƽLow on-resistance and low conduction losses ƽSmall package ƽUltra Low Gate Charge cause lower driving requirements ƽ100% Avalanche Tested ƽROHS compliant VDS@Tjmax 650 V RDS(ON) MAX 1200 mΩ ID 4 A.

📁 Similar Datasheet

4N65 - Power MOSFET (Zibo Seno)
4N65-C - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N65-E - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N65-ML - N-CHANNEL POWER MOSFET (UTC)
4N65-N - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N65-Q - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N65-R - N-CHANNEL POWER MOSFET (Unisonic Technologies)
4N65-S - N-CHANNEL POWER MOSFET (UTC)

Other Datasheets by Rectron

Published: Nov 12, 2024 |