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RS8N65F - N-Channel MOSFET

Features

  • Fast switching speed.
  • 100% avalanche tested.
  • Improved dv/dt capability Ordering Information Part Number Package RS8N65F T0-220F Marking RS8N65F RS8N65F N Channel MOSFET Packing Tube Qty. 50 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified Symbol Parameter RS8N65F Units VDSS Drain-to-Source Voltage 650 V ID Continuous Drain Current TC=25℃ IDM Pulsed Drain Current (Note.
  • 1) 8 A 32 PD Power Dissipation 35 W VGS EAS TL TPKG.

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Datasheet Details

Part number RS8N65F
Manufacturer Reasunos
File Size 708.28 KB
Description N-Channel MOSFET
Datasheet download datasheet RS8N65F Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ID RDS(ON)(Typ ) VDSS 8A 0.95Ω 650V Applications: • Switch Mode Power Supply(SMPS) • Uninterruptible Power Supply (UPS) • Power Factor Correction (PFC) Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability Ordering Information Part Number Package RS8N65F T0-220F Marking RS8N65F RS8N65F N Channel MOSFET Packing Tube Qty. 50 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified Symbol Parameter RS8N65F Units VDSS Drain-to-Source Voltage 650 V ID Continuous Drain Current TC=25℃ IDM Pulsed Drain Current (Note*1) 8 A 32 PD Power Dissipation 35 W VGS EAS TL TPKG Gate- to- Source Voltage Single Pulse Avalanche Engergy L = 10mH, VDD = 50V, RG = 25 Ω Maximum Temperature for Soldering Leads at 0.063in(1.
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