• Part: RS4N65F
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Reasunos
  • Size: 681.85 KB
Download RS4N65F Datasheet PDF
Reasunos
RS4N65F
Features : - 100% avalanche tested - Ultra low gate Charge(typical 14n C) - Low Cress(typical 5.4p F) - Fast switching capability - Ro HS pliant Ordering Information Part Number Package Marking RS4N65F TO-220F RS4N65F Lead Free Package and Finish RDS(ON)(Typ.) VDSS 4A 2.1Ω 650V Not to Scale Absolute Maximun Ratings Tc=25℃ unless otherwise specified Symbol VDSS ID ID@ 100 ℃ IDM PD VGS EAS TL TPKG TJ and TSTG Parameter Drain-to-Source Voltage (Note- 1) Continuous Drain Current Continuous Drain Current Pulsed Drain Current (Note- 2) Power Dissipation Derating Factor above 25℃ Gate-to-Source Voltage Single Pulse Avalanche Engergy L=29m H IAS=4A VDD=50V RG=25Ω TJ=25℃ Repetitve Pulse Avalanche Engergy (pulse width limied by maximum junction temperature) Maximum Temperature for Soldering Leads at 0.063in(1.6mm)from Case for 10 seconds Package Body for 10 seconds Operating Junction and Storage Temperature Range 650 4 2.7 16 38 0.3 ±30 232 300 260 -55 to...