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RS100N210T - N-Channel MOSFET

Features

  • Fast switching speed.
  • 100% avalanche tested.
  • Improved dv/dt capability Ordering Information Part Number Package RS100N210T T0-220 Marking RS100N210T RS100N210T N Channel MOSFET Packing Tube Qty. 50 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified Symbol Parameter RS100N210T Units VDSS Drain-to-Source Voltage 100 V ID Continuous Drain Current TC=25℃ ID Continuous Drain Current TC=100℃ IDM Pulsed Drain Current PD Power Dissipat.

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Datasheet Details

Part number RS100N210T
Manufacturer Reasunos
File Size 806.88 KB
Description N-Channel MOSFET
Datasheet download datasheet RS100N210T Datasheet

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Full PDF Text Transcription

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ID 210A RDS(ON)(Typ ) 1.9mΩ VDSS 100V Applications: • Load Switch • PWM Applications • Power Managment Features: • Fast switching speed • 100% avalanche tested • Improved dv/dt capability Ordering Information Part Number Package RS100N210T T0-220 Marking RS100N210T RS100N210T N Channel MOSFET Packing Tube Qty. 50 PCS Absolute Maximun Ratings Tc= 2 5℃ unless otherwise specified Symbol Parameter RS100N210T Units VDSS Drain-to-Source Voltage 100 V ID Continuous Drain Current TC=25℃ ID Continuous Drain Current TC=100℃ IDM Pulsed Drain Current PD Power Dissipation 210 132 A 840 272 W VGS EAS TL TPKG Gate- to- Source Voltage Single Pulse Avalanche Engergy L = 0.5mH,IS = 42A, RG = 25Ω, Tj = 25℃ Maximum Temperature for Soldering Leads at 0.063in(1.
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