Datasheet4U Logo Datasheet4U.com

RMWL05001 - 5 GHZ Low Noise Amplifier Mmic

Description

The RMWL05001 is a 2-stage GaAs MMIC amplifier designed as a 4.7 to 5.2 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications.

Features

  • Absolute Maximum Ratings Parameter Positive DC voltage (+4 V Typical) Positive DC current RF Input Power (from 50 Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Symbol Vd ID PIN TC Tstg RJC Value +6 113 +8 -30 to +85 -55 to +125 112 Units Volts mA dBm °C °C °C /W Electrical Characteristics (At 25°C), 50 Ω system, Vd=+4 V Single Bias Supply Parameter Min Typ Max 5.2 2.3 20 Unit GHz dB dB dB dB dBm Parameter Drain Current at.

📥 Download Datasheet

Datasheet Details

Part number RMWL05001
Manufacturer Raytheon RF Components
File Size 440.36 KB
Description 5 GHZ Low Noise Amplifier Mmic
Datasheet download datasheet RMWL05001 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RMWL26001 23/26 GHZ Lna Fairchild Semiconductor
RMWL38001 38 GHZ Lna Fairchild Semiconductor
RMW03L Wirewound/Metal Film Resistors Vishay Intertechnology
RMW05L Wirewound/Metal Film Resistors Vishay Intertechnology
RMW07L Wirewound/Metal Film Resistors Vishay Intertechnology

Other Datasheets by Raytheon RF Components

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RMWL05001 5 GHz Low Noise Amplifier MMIC www.DataSheet4U.com PRODUCT INFORMATION Description The RMWL05001 is a 2-stage GaAs MMIC amplifier designed as a 4.7 to 5.2 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWL05001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of low noise amplifier applications. Single positive supply operation 4 mil substrate Noise figure 1.4 dB (typ.) Small-signal gain 18 dB (typ.) 1dB compressed Pout 14 dBm (typ.) Chip size 2.0 mm x 1.
Published: |