Datasheet4U Logo Datasheet4U.com

I25N10 - 25A 100V N-channel Enhancement Mode Power MOSFET

Description

These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

Which accords with the RoHS standard.

Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤36mΩ).
  • Low Gate Charge(Typical:61nC).
  • Low Reverse Transfer Capacitances(Typical:84pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test 3.

📥 Download Datasheet

Datasheet preview – I25N10

Datasheet Details

Part number I25N10
Manufacturer ROUM
File Size 1.21 MB
Description 25A 100V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet I25N10 Datasheet
Additional preview pages of the I25N10 datasheet.

📁 Similar Datasheet

Other Datasheets by ROUM

    Full PDF Text Transcription

    Click to expand full text
    25N10/F25N10/I25N10/ E25N10/B25N10/D25N10 25A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤36mΩ) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:84pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Power switching applications ● LED Boost ● UPS power supply ● Load switch VDSS = 100V RDS(on) （TYP)= 30mΩ ID = 25A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.
    Published: |