F10N60 - 10A 600V N-channel Enhancement Mode Power MOSFET

Product Overview

Datasheet Details

Part number	F10N60
Manufacturer	ROUM
File Size	897.66 KB
Description	10A 600V N-channel Enhancement Mode Power MOSFET
Datasheet	F10N60 Datasheet
Additional preview pages of the F10N60 datasheet.

Product details

Description

These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

Fast Switching.
Low ON Resistance(Rdson≤0.9Ω).
Low Gate Charge(Typical Data:32nC).
Low Reverse Transfer Capacitances(Typical:7.5pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test 3.

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Published: Jan 17, 2019 |