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E630 Datasheet 9A 200V N-channel Enhancement Mode Power MOSFET

Manufacturer: ROUM

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Datasheet Details

Part number E630
Manufacturer ROUM
File Size 1.32 MB
Description 9A 200V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet E630 Datasheet

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

VDSS = 200V RDS(on) （TYP)= 0.34Ω ID = 9A 2

Overview

630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET.

Key Features

  • Fast Switching.
  • Low ON Resistance(Rdson≤0.4Ω).
  • Low Gate Charge(Typical Data:22nC).
  • Low Reverse Transfer Capacitances(Typical:22pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test 3.

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