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E4N60 Datasheet 4A 600V N-channel Enhancement Mode Power MOSFET

Manufacturer: ROUM

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Datasheet Details

Part number E4N60
Manufacturer ROUM
File Size 1.27 MB
Description 4A 600V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet E4N60 Datasheet

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

VDSS = 600V RDS(on) （TYP)= 2.1Ω ID = 4A 2

Overview

4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET.

Key Features

  • Fast Switching.
  • ESD Improved Capability.
  • Low ON Resistance(Rdson≤2.5Ω).
  • Low Gate Charge(Typical Data:14.5nC).
  • Low Reverse Transfer Capacitances(Typical:4pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test TO-220C TO-220F TO-262 3.

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