E2N60 Datasheet 2A 600V N-channel Enhancement Mode Power MOSFET

Manufacturer: ROUM

E2N60 2a 600v n-channel enhancement mode power mosfet by ROUM - Datasheet Preview

Datasheet Details

Part number	E2N60
Manufacturer	ROUM
File Size	1.42 MB
Description	2A 600V N-channel Enhancement Mode Power MOSFET
Download	E2N60 Download (PDF)

General Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

VDSS = 600V RDS(on) （TYP)= 4.0Ω ID = 2A 2

Overview

2N60/F2N60/I2N60/E2N60/B2N60/D2N60 2A 600V N-channel Enhancement Mode Power MOSFET.

Key Features

Fast Switching.
Low ON Resistance(Rdson≤4.5Ω).
Low Gate Charge(Typ:8nC).
Low Reverse Transfer Capacitances(Typ:3.8pF).
100% Single Pulse Avalanche Energy Test.
100% ΔVDS Test TO-220C TO-220F TO-262 3.

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