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B4N60 - 4A 600V N-channel Enhancement Mode Power MOSFET

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Which accords with the RoHS standard.

Features

  • Fast Switching.
  • ESD Improved Capability.
  • Low ON Resistance(Rdson≤2.5Ω).
  • Low Gate Charge(Typical Data:14.5nC).
  • Low Reverse Transfer Capacitances(Typical:4pF).
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test TO-220C TO-220F TO-262 3.

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Datasheet Details

Part number B4N60
Manufacturer ROUM
File Size 1.27 MB
Description 4A 600V N-channel Enhancement Mode Power MOSFET
Datasheet download datasheet B4N60 Datasheet

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Full PDF Text Transcription

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4N60/F4N60/I4N60/E4N60/B4N60/D4N60 4A 600V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. VDSS = 600V RDS(on) （TYP)= 2.1Ω ID = 4A 2 Features ● Fast Switching ● ESD Improved Capability ● Low ON Resistance(Rdson≤2.5Ω) ● Low Gate Charge(Typical Data:14.5nC) ● Low Reverse Transfer Capacitances(Typical:4pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test TO-220C TO-220F TO-262 3 Applications ● used in various power switching circuit for system miniaturization and higher efficiency. ● Power switch circuit of electron ballast and adaptor.
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