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SCT4062KWA
N-channel SiC power MOSFET
Datasheet
VDSS RDS(on) (Typ.)
ID*1 PD
1200V 62mΩ 24A 93W
● Features 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant 7) Wide creepage distance = min.4.7 mm
lOutline
TO-263-7LA (Tab)
lInner circuit
(1) (2)(3) (4) (5)(6) (7)
(Tab)
(1) Gate
(2) Driver Source
*1 (3)~(7) Pow er Source
(1)
(Tab) Drain
(2)
*1 Body Diode
(3)~(7)
Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to
malfunction.