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SCS220AE - SiC Schottky Barrier Diode

Datasheet Summary

Features

  • 1) Shorter recovery time 650V 20A 31nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 2.

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Datasheet Details

Part number SCS220AE
Manufacturer ROHM
File Size 0.98 MB
Description SiC Schottky Barrier Diode
Datasheet download datasheet SCS220AE Datasheet
Additional preview pages of the SCS220AE datasheet.

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Full PDF Text Transcription

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SCS220AE SiC Schottky Barrier Diode lOutline Data Sheet VR IF QC lFeatures 1) Shorter recovery time 650V 20A 31nC TO-247 (1) (2) (3) lInner circuit 2) Reduced temperature dependence 3) High-speed switching possible (1) N/C (2) Cathode (3) Anode (1) (2) (3) lPackaging specifications Packaging lConstruction Silicon carbide epitaxial planer Shottoky Diode Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings (Tj = 25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Symbol VRM VR IF Value 650 650 20* 71* Surge no repetitive forward current IFSM 1 2 3 Tube 30 C SCS220AE Reel size (mm) Tape width (mm) Unit V V A A A A A W °C °C 260* 56* 4 Repetitive peak forward current Total power disspation Junction temperature
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