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S6401 - SiC Schottky Barrier Diode Bare Die

Datasheet Summary

Features

  • 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible.
  • Inner Circuit.
  • Construction Silicon carbide epitaxial planar type Schottky diode Datasheet.
  • Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 1700 V Reverse voltage (DC) Continuous forward current VR 1700 V IF 10.
  • 1 A Surge non- PW=10ms sinusoidal, Tj=25°C 41 A repetitive forward PW=10ms sinusoidal, Tj=150°C IF.

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Datasheet Details

Part number S6401
Manufacturer ROHM
File Size 942.99 KB
Description SiC Schottky Barrier Diode Bare Die
Datasheet download datasheet S6401 Datasheet
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    Full PDF Text Transcription

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    S6401 SiC Schottky Barrier Diode Bare Die VR 1700V IF 10A*1 QC 51nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Inner Circuit Construction Silicon carbide epitaxial planar type Schottky diode Datasheet Absolute Maximum Ratings (Tj = 25°C ) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 1700 V Reverse voltage (DC) Continuous forward current VR 1700 V IF 10 *1 A Surge non- PW=10ms sinusoidal, Tj=25°C 41 A repetitive forward PW=10ms sinusoidal, Tj=150°C IFSM *2 30 A current PW=10s square, Tj=25°C 160 A i2t value 1≦PW≦10ms, Tj=25°C 1≦PW≦10ms, Tj=150°C ∫i2d*t2 8.4 4.
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