)Ultra low switching loss 2)High current overload capacity 3)Cathode common dual type.
Construction Silicon epitaxial planer.
Structure
ROHM : LPDS JEITA : TO263S
① Manufacture Year, Week and Day.
Taping dimensions (Unit : mm)
①②③.
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage Reverse voltage
VRM VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature Storage temperature
IFSM
Tj Tstg
Conditions Duty.
Full PDF Text Transcription for RF2001NS3DFH (Reference)
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RF2001NS3DFH. For precise diagrams, and layout, please refer to the original PDF.
Super Fast Recovery Diode RF2001NS3DFH Series Standard Fast Recovery Dimensions (Unit : mm) Applications General rectification RF2001 NS3D ① Data Sheet AEC-Q101 Qualif...
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cations General rectification RF2001 NS3D ① Data Sheet AEC-Q101 Qualified Land size figure (Unit : mm) Features 1)Ultra low switching loss 2)High current overload capacity 3)Cathode common dual type Construction Silicon epitaxial planer Structure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day Taping dimensions (Unit : mm) ①②③ Absolute maximum ratings (Tc=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage VRM VR Average rectified forward current Io Forward current surge peak Junction temperature Storage temperature IFSM Tj Tstg Conditions Duty≤0.
RF2001NS3DFH Datasheet
