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RB522ES-30 - Schottky Barrier Diode

Features

  • 1) Small silicon package (SMD0603) 2) High Accuracy Manufacturing Dimension tolerance10mm 3) Low VF lConstruction Silicon epitaxial planar type F 0～0.030 0.280±0.010 0.260±0.010 0.300±0.010 ROHM: SMD0603 lTaping Dimensions (Unit : mm) SMD0603 lStructure Cathode Anode.
  • Absolure Maximum Ratings (Ta=25oC) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRM Duty≦0.5 Reverse Voltage Average forward rectified current Non-repetitive Forward Current Surge Peak Operating.

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Datasheet Details

Part number RB522ES-30
Manufacturer ROHM
File Size 1.56 MB
Description Schottky Barrier Diode
Datasheet download datasheet RB522ES-30 Datasheet

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Full PDF Text Transcription

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Schottky Barrier Diode RB522ES-30 lApplication General rectification lDimensions (Unit : mm) Data Sheet lLand Size Figure (Unit : mm) 0.31 0.380±0.010 0.180±0.010 0.600±0.010 0.23 0.38 lFeatures 1) Small silicon package (SMD0603) 2) High Accuracy Manufacturing Dimension tolerance10mm 3) Low VF lConstruction Silicon epitaxial planar type F 0～0.030 0.280±0.010 0.260±0.010 0.300±0.010 ROHM: SMD0603 lTaping Dimensions (Unit : mm) SMD0603 lStructure Cathode Anode ●Absolure Maximum Ratings (Ta=25oC) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRM Duty≦0.
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