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RB085T-40NZ - Schottky Barrier Diode

Features

  • 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability.
  • Construction Silicon epitaxial planer 8 Data Sheet.
  • Structure (1) (2) (3).
  • Packing Dimensions (Unit : mm) 7 540 34.5.
  • Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (.
  • 1) VRM 45 VR 40 Io 10 Forward current surge peak (60Hz / 1cyc) (.
  • 1) Junction temperature IFSM Tj 100 150 Storage temperature Ts.

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Datasheet Details

Part number RB085T-40NZ
Manufacturer ROHM
File Size 422.31 KB
Description Schottky Barrier Diode
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Full PDF Text Transcription

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Schottky barrier diode RB085T-40NZ Applications Switching power supply Dimensions (Unit : mm) Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability Construction Silicon epitaxial planer 8 Data Sheet Structure (1) (2) (3) ●Packing Dimensions (Unit : mm) 7 540 34.5 Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) VRM 45 VR 40 Io 10 Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature IFSM Tj 100 150 Storage temperature Tstg 40 to 150 (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol Min. Typ. Max.
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