Datasheet4U Logo Datasheet4U.com

R6020KNX - Power MOSFET

Features

  • 1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit l.

📥 Download Datasheet

Datasheet preview – R6020KNX

Datasheet Details

Part number R6020KNX
Manufacturer ROHM
File Size 1.57 MB
Description Power MOSFET
Datasheet download datasheet R6020KNX Datasheet
Additional preview pages of the R6020KNX datasheet.

📁 Similar Datasheet

  • R6020KNX - N-Channel MOSFET (INCHANGE)
  • R6020KNJ - N-Channel MOSFET (INCHANGE)
  • R6020KNZ - N-Channel MOSFET (INCHANGE)
  • R6020KNZ1 - N-Channel MOSFET (INCHANGE)
  • R6020422 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020425 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020435 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020622 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020625 - Fast Recovery Rectifier (Powerex Power Semiconductors)
  • R6020635 - Fast Recovery Rectifier (Powerex Power Semiconductors)
Other Datasheets by ROHM

Full PDF Text Transcription

Click to expand full text
R6020KNX 　　Nch 600V 20A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.196Ω ID ±20A TO-220FM PD 68W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Ultra Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±20 A ±60 A Gate - Source voltage Static AC (f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C) IAS EAS*3 PD 3.
Published: |