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R6002ENH
Nch 600V 2A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
600V 3.4Ω ±1.7A 2W
lFeatures
1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant
lOutline
SOP8
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TB1
Marking
R6002ENH
Basic ordering unit (pcs)
2500
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
600 V ±1.7 A ±4 A
Gate - Source voltage
static AC(f>1Hz)
VGSS
±20 V ±30 V
Avalanche current, single pulse
IAS*3 0.