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QH8JA1
-20V Pch +Pch Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-20V 38mΩ ±5.0A 1.5W
lFeatures
1) Low on - resistance. 2) Small surface mount package(TSMT8) 3) -1.8V Drive. 4) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
Datasheet
lApplication Switching
lPackaging specifications
Packing
Reel size (mm) Type Tape width (mm)
Quantity (pcs) Taping code Marking
Embossed Tape 180 8 3000 TCR JA1
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-20 V
Continuous drain current
ID*1 ±5.0 A
Pulsed drain current
IDP*2 ±18 A
Gate - Source voltage
VGSS
±10 V
Avalanche current, single pulse
IAS*3 -5.0 A
Avalanche energy, single pulse
EAS*3
8.