GNP2025TD-Z - 650V Enhancement mode GaN HEMT

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Features

650V E-mode GaN HEMT 25mΩ Resistance 13.2nC Gate Charge Package Information W (Typ) × D (Typ) × H (Max) 11.68 mm × 9.9 mm × 2.4 mm TOLL-8N.

ROHM

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Datasheet Details

Part number	GNP2025TD-Z
Manufacturer	ROHM
File Size	3.20 MB
Description	650V Enhancement mode GaN HEMT
Datasheet	GNP2025TD-Z Datasheet
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Datasheet 650V Enhancement mode GaN HEMT GNP2025TD-Z Features 650V E-mode GaN HEMT 25mΩ Resistance 13.2nC Gate Charge Package Information W (Typ) × D (Typ) × H (Max) 11.68 mm × 9.9 mm × 2.4 mm TOLL-8N Application High Switching Frequency Converter High Density Converter Key Performance Parameters Symbol Values Unit VDS,max 650 V ID 59.8 A ID,pulse 119.7 A RDS(on),typ 25 mΩ Qg 13.2 nC Qoss @400V 138 nC Qrr 0 nC Drain Contact 8 7 1 Gate 8 Kelvin Source 7 Drain Drain Contact Source 1,2,3,4,5,6 Ordering Information Ordering Code Package GNP2025TD-ZTR TOLL-8N Ordering Unit (pcs) 2,000 Marking GNP2025 www.rohm.com © 2025 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 1/12 TSZ02201-0G5E0L200020-1-2 9.Oct.2025 Rev.

Published: Dec 7, 2025 |