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BM60210FV-C - 1200V High Voltage High & Low-side / Gate Driver

Description

The BM60210FV-C is a monolithic high and low side gate drive IC, which can be drive high speed power MOSFET and IGBT driver with bootstrap operation.

The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200V.

Features

  • Floating Channels for Bootstrap Operation to +1200V.
  • Gate drive supply range from 10V to24V.
  • Built-in Under Voltage Lockout for Both Channels.
  • 3.3V and 5.0V Input Logic Compatible.
  • Ac.

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Datasheet Details

Part number BM60210FV-C
Manufacturer ROHM
File Size 917.51 KB
Description 1200V High Voltage High & Low-side / Gate Driver
Datasheet download datasheet BM60210FV-C Datasheet

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Full PDF Text Transcription

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Datasheet 1200V High Voltage High & Low-side, Gate Driver BM60210FV-C General Description The BM60210FV-C is a monolithic high and low side gate drive IC, which can be drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200V. It incorporates the fault signal output functions, Under-voltage Lockout (UVLO) function and Miller clamp function.
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