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B1340 - 2SB1340

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) Complement to Type 2SD1889 APPLICATIONS

Designed for power amplifier applications.

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Datasheet Details

Part number B1340
Manufacturer ROHM Electronics
File Size 137.96 KB
Description 2SB1340
Datasheet download datasheet B1340 Datasheet

Full PDF Text Transcription for B1340 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for B1340. For precise diagrams, and layout, please refer to the original PDF.

INCHANGE Semiconductor isc Product Specification www.DataSheet4U.com isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION ·Collector-Emitter Breakdown Voltage:...

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r Transistor 2SB1340 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ -10 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 30 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：

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