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SZP-5026Z - 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER

Description

RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier.

It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

Features

  • an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced surface-mount SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET Vcc Features.
  • P1dB =33dBm @ 5V 802.11a 54Mb/s Class AB Performance POUT =25dBm @ 2.5% EVM, 5.9GHz, 5V, 680mA On-Chip Input Power Detector Internally Prematched Input and Output Proprietary Low Thermal Resistance Package Power Up/Down Control.

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Datasheet Details

Part number SZP-5026Z
Manufacturer RFMD
File Size 439.23 KB
Description 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER
Datasheet download datasheet SZP-5026Z Datasheet

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Full PDF Text Transcription

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SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier Preliminary SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 www.datasheet4u.com Product Description RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor (HBT) power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power amp for 802.16 equipment in the 4.9GHz to 5.9GHz bands. It is pre-matched on both ports to simplify external application circuit design.
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