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SPA1526Z - 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

Description

RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier.

The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

Features

  • an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET.
  • InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS ACP versus Channel Power, Over Frequency, -35.0 WCDMA 880MHz -40.0 1960MHz 2140MHz -45.0 -50.0 -55.0 -60.0 -65.0 -70.0 -75.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 PO.

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Datasheet Details

Part number SPA1526Z
Manufacturer RFMD
File Size 573.23 KB
Description 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
Datasheet download datasheet SPA1526Z Datasheet

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Other Datasheets by RFMD

Part Number Description
SPA-1426Z 0.7GHz to 2.2GHz 1W InGaP HBT AMPLIFIER
SPA-1526Z 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

Full PDF Text Transcription

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SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT SPA1526ZAmplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 NOT FOR NEW dBc DESIGNS Product Description RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.
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